DCR390J85 phase control thyristor preliminary information d s5833 - 2 january 2010 (ln26981 ) 1 / 10 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repetitive peak voltages v drm and v rrm v conditions DCR390J85* dcr390j80 dcr390j70 8500 8000 7000 t vj = - 40c to 125c, i drm = i rrm = 100ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. *8200v @ - 40 0 c, 8500v @ 0 0 c ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: DCR390J85 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v drm 8500v i t(av) 387a i tsm 5250a dv/dt* 1500v/s di/dt 200a/us * higher dv/dt selections available outline type co de: j (see package details for further information) fig. 1 package outline
semiconductor DCR390J85 2 / 10 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 387 a i t(rms) rms value - 608 a i t continuous (direct) on - state current - 583 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 5.25 ka i 2 t i 2 t for fusing v r = 0 0.138 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.0379 c/w single side cooled anode dc - 0.0745 c/w cathode dc - 0.0797 c/w r th(c - h) thermal resistance C case to heatsink clamping force 11.5kn double side - 0.0072 c/w (with mounting compound) single side - .0144 c/w t vj virtual junction temperature blocking v drm / vrrm - 125 c t stg storage temperature range - 55 125 c f m clamping force 10 13 kn
semiconductor DCR390J85 3 / 10 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 100 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open - 1500 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) repetitive 50hz - 100 a/s gate source 30v, 10 ? , non - repetitive - 200 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage C low level 50a to 400a at t case = 125c - 1.162 v threshold voltage C high level 400a to 1600a at t case = 125c - 1.3063 v r t on - state slope resistance C low level 50a to 400a at t case = 125c - 3.153 m ? on - state slope resistance C high level 400a to 1600a at t case = 125c - 2.763 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3 s t r = 0.5s, t j = 25c t q turn - off time t j = 125c, v r = 1 00v, di/dt = 5a/s, - 12 00 s dv dr /dt = 20v/s linear q s stored charge i t = 500a, t j = 125c, di/dt = 5a/s, 2000 30 00 c i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5a - 300 ma
semiconductor DCR390J85 4 / 10 www.dynexsemi.com gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at 50% v drm, t case = 125c 0.4 v i gt gate trigger current v drm = 5v, t case = 25c 250 ma i gd gate non - trigger current at 50% v drm, t case = 125c 15 ma curves fig.2 maximum & minimum on - state characteristics v tm equation where a = 1.545561 b = - 0.202735 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0.001865 d = 0.066158 these values are valid for t j = 125c for i t 50a to 1600a 0 400 800 1200 1600 1.0 2.0 3.0 4.0 5.0 instantaneous on-state voltage v t - (v) instantaneous on-state current i t - (a) 25c min 25c max 125c min 125c max
semiconductor DCR390J85 5 / 10 www.dynexsemi.com fig.3 on - state power dissipation C sine wave fig.4 maximum permissible case temperature, double side cooled C sine wave fig.5 maximum permissible heatsink temperature, double side cooled C sine wave fig.6 on - state power dissipation C rectangular wave 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 500 1000 1500 mean on-state current, i t(av) - (a) mean power dissipation - (kw) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 mean on-state current, i t(av) - (a) maximum case temperature, t case ( o c ) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 mean on-state current, i t(av) - (a) maximum heatsink temperature, t heatsink - ( o c ) 180 120 90 60 30 0 1 2 3 4 5 6 7 8 9 10 11 12 0 500 1000 1500 2000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) d.c. 180 120 90 60 30
semiconductor DCR390J85 6 / 10 www.dynexsemi.com fig.7 maximum permissible case temperature, double side cooled C rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled C rectangular wave fig.9 maximum (limit) transient thermal impedance C junction to case (c/kw) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 800 900 mean on-state current, i t(av) - (a) maximum permissible case temperature , t case - (c) d.c. 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 800 mean on-state current, i t(av ) - (a) maximum heatsik temperature t heatsink - ( o c) d.c. 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 0.001 0.01 0.1 1 10 100 time ( s ) thermal impedance -z th ( c/kw ) double side cooled anode cooled cathode cooled 1 2 3 4 double side cooled r i (c/kw) 2.4256 9.3503 10.6963 15.3758 t i (s) 0.0087759 0.053099 0.4497246 1.395 anode side cooled r i (c/kw) 2.8091 9.5576 11.3564 50.6136 t i (s) 0.0097443 0.0591913 0.4759179 6.5548 cathode side cooled r i (c/kw) 2.9507 9.4031 11.0771 56.0405 t i (s) 0.0100391 0.0606056 0.4732916 7.228 z th = ? [r i x ( 1-exp. (t/t i ))] [1] ? r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling ? z th (z) ? z th (z) ? z th (z) ? sine. rect. ? sine. rect. ? sine. rect. 180 4.43 3.01 180 4.39 2.99 180 4.37 2.98 120 5.13 4.30 120 5.07 4.26 120 5.05 4.25 90 5.89 5.03 90 5.81 4.97 90 5.79 4.96 60 6.58 5.81 60 6.48 5.74 60 6.45 5.72 30 7.12 6.67 30 7.00 6.57 30 6.97 6.54 15 7.36 7.13 15 7.24 7.01 15 7.20 6.98
semiconductor DCR390J85 7 / 10 www.dynexsemi.com fig.10 multi - cycle surge current fig.11 single - cycle surge current fig.12 stored charge fig.13 reverse recovery current 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 5 10 15 20 25 stored charge qs - (uc) rate of decay of on - state current, di/dt - (a/us) q smax = 1932.517*(di/dt) 0.275 q smin = 1117.47*(di/dt) 0.3651 conditions: t j = 125 o c i t = 500a. t p = 1000us, v r = - 100v 0 50 100 150 200 250 300 0 5 10 15 20 25 reverse recovery current, i rr - (a) rate of decay of on - state current, di/dt - (a/us) i rrmax = 33.561*(di/dt) 0.6733 i rrmin = 26.321*(di/dt) 0.6928 conditions: t j = 125 o c, i t = 500a, t p = 1000us, v r = - 100v
semiconductor DCR390J85 8 / 10 www.dynexsemi.com fig14 gate characteristics fig. 15 gate characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger current, i gt - (a) gate trigger voltage, v gt - (v) lower limit upper limit 5w 10w 20w 50w 100w 150w -40c 50 100 400 100 150 150 150 200 150 150 125 500 150 150 100 1000 150 100 25 10000 20 - - pulse width us frequency hz pulse power p gm (watts)
semiconductor DCR390J85 9 / 10 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. clamping force: 11.5 kn 10% lead length: 420mm lead terminal connector: m4 ring package outline type code: j fig.16 package outline 3rd angle projection if in doubt ask do not scale cathode 20 offset (nom.) to gate tube for package height see table ?1.5 anode gate ?33.95 nom ?57.0 max ?33.95 nom electrodes) deep (in both hole ?3.60 x 2.00 device maximum thickness (mm) minimum thickness (mm) dcr880j22 34.465 33.915 dcr780j28 34.54 33.99 dcr640j42 34.77 34.22 dcr570j52 34.89 34.34 dcr490j65 35.15 34.6 DCR390J85 35.51 34.96
semiconductor DCR390J85 10 / 10 www.dynexsemi.com stresses above those listed in this data sheet may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be fol lowed. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +(0) 1522 502753 / 502901 fax: +(0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor 2003 technical documentation C not for resale. produced in united kingdom. this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor f orm part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warran ty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, desig n or price of any product or service. informat ion concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactor y in a specific piece of equipment. it is the users responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in signific ant injury or death to the user. all products and materials are sold and services provided subject to the companys conditions of sale, which are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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